HSE06-calculated band structure of AlAs, total density of states (DOS)

Por um escritor misterioso

Last updated 25 março 2025

Earth-abundant nontoxic direct band gap semiconductors for photovoltaic applications by ab-initio simulations - ScienceDirect

Electronic band structures of (a) pristine germanene, (b) pristine

Frontiers Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories

HSE06 surface band structures of Si(001)-2 × 1 (a) and Ge(001)-2 × 1

An Empirical, yet Practical Way To Predict the Band Gap in Solids by Using Density Functional Band Structure Calculations

Electronic band structure with the corresponding DOS and PDOS of (a)

An Empirical, yet Practical Way To Predict the Band Gap in Solids by Using Density Functional Band Structure Calculations

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

PDF] Band gap and partial density of states for ZnO: Under high pressure

Tunable electronic properties of AlAs/InP heterostructure via external electric field and uniaxial strain

Calculated band structure (left) and the total and partial DOS (right)

Structural, mechanical, and electronic properties of 25 kinds of III–V binary monolayers: A computational study with first-principles calculation

First-principles study on the electronic and optical properties of AlSb monolayer

QuantumATK: An integrated platform of electronic and atomic-scale modelling tools – arXiv Vanity

Density of states (DOS) calculated with HSE06 for (a) TiO 2 , (b) TiO

Recomendado para você